Comment on “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2004

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.1828574